U.S. flag

An official website of the United States government

Dot gov

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Https

Secure .gov websites use HTTPS
A lock () or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Breadcrumb

  1. Home

Data associated with "Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz" for the 2024 International Microwave Symposium (IMS) in Washington, D.C.

We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave electronics on the rise, reliable methods for measuring the electrical properties of dielectrics used in integrated circuits are critical. We outline an on-wafer method for extracting the permittivity of a 3D multilayer glass structure from 100 MHz to 30 GHz using S-parameter measurements of different calibration chips. Our method can be used to inform better design of metrology for dielectric materials for 3D integrated circuit technologies.This is data associated with the manuscript "Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz" for the 2024 International Microwave Symposium (IMS) in Washington, D.C. The manuscript is currently under review by ERB in the NPS system under PUB ID 957051 / N2024-0193

About this Dataset

Updated: 2024-02-22
Metadata Last Updated: 2023-11-17 00:00:00
Date Created: N/A
Views:
Data Provided by:
permittivity
Dataset Owner: N/A

Access this data

Contact dataset owner Landing Page URL
Download URL
Table representation of structured data
Title Data associated with "Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz" for the 2024 International Microwave Symposium (IMS) in Washington, D.C.
Description We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave electronics on the rise, reliable methods for measuring the electrical properties of dielectrics used in integrated circuits are critical. We outline an on-wafer method for extracting the permittivity of a 3D multilayer glass structure from 100 MHz to 30 GHz using S-parameter measurements of different calibration chips. Our method can be used to inform better design of metrology for dielectric materials for 3D integrated circuit technologies.This is data associated with the manuscript "Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz" for the 2024 International Microwave Symposium (IMS) in Washington, D.C. The manuscript is currently under review by ERB in the NPS system under PUB ID 957051 / N2024-0193
Modified 2023-11-17 00:00:00
Publisher Name National Institute of Standards and Technology
Contact mailto:[email protected]
Keywords permittivity , dielectrics , microwave integrated circuits , glass , wafer-level packaging
{
    "identifier": "ark:\/88434\/mds2-3111",
    "accessLevel": "public",
    "contactPoint": {
        "hasEmail": "mailto:[email protected]",
        "fn": "Jacob Pawlik"
    },
    "programCode": [
        "006:045"
    ],
    "@type": "dcat:Dataset",
    "landingPage": "https:\/\/data.nist.gov\/od\/id\/mds2-3111",
    "description": "We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave electronics on the rise, reliable methods for measuring the electrical properties of dielectrics used in integrated circuits are critical. We outline an on-wafer method for extracting the permittivity of a 3D multilayer glass structure from 100 MHz to 30 GHz using S-parameter measurements of different calibration chips. Our method can be used to inform better design of metrology for dielectric materials for 3D integrated circuit technologies.This is data associated with the manuscript \"Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz\" for the 2024 International Microwave Symposium (IMS) in Washington, D.C. The manuscript is currently under review by ERB in the NPS system under PUB ID 957051 \/ N2024-0193",
    "language": [
        "en"
    ],
    "title": "Data associated with \"Characterizing the broadband RF permittivity of 3D-integrated layers in a glass wafer stack from 100 MHz to 30 GHz\" for the 2024 International Microwave Symposium (IMS) in Washington, D.C.",
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Figure%205a_Mapping%20functions%20from%20simulations.csv",
            "mediaType": "text\/csv",
            "title": "Figure 5a_Mapping functions from simulations"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Table%201_Coplanar%20waveguide%20dimensions.csv",
            "mediaType": "text\/csv",
            "title": "Table 1_Coplanar waveguide dimensions"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Figure%204a_Resistance-Inductance-Capacitance%20of%20Chip%201%20substrate%20calibration%20chip.csv",
            "mediaType": "text\/csv",
            "title": "Figure 4a_Resistance-Inductance-Capacitance of Chip 1 substrate calibration chip"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Figure%204b_Resistance-Inductance-Capacitance%20of%20Chip%202%20bonding%20layer%20calibration%20chip.csv",
            "mediaType": "text\/csv",
            "title": "Figure 4b_Resistance-Inductance-Capacitance of Chip 2 bonding layer calibration chip"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Figure%204c_Resistance-Inductance-Capacitance%20of%20Chip%203%20superstrate%20calibration%20chip.csv",
            "mediaType": "text\/csv",
            "title": "Figure 4c_Resistance-Inductance-Capacitance of Chip 3 superstrate calibration chip"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/Figure%205b_Permittivity%20of%20glass.csv",
            "mediaType": "text\/csv",
            "title": "Figure 5b_Permittivity of glass"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3111\/README.txt",
            "mediaType": "text\/plain",
            "title": "README"
        }
    ],
    "license": "https:\/\/www.nist.gov\/open\/license",
    "bureauCode": [
        "006:55"
    ],
    "modified": "2023-11-17 00:00:00",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "accrualPeriodicity": "irregular",
    "theme": [
        "Metrology:Electrical\/electromagnetic metrology",
        "Metrology:Dimensional metrology",
        "Materials:Concrete\/cement",
        "Materials:Materials characterization",
        "Advanced Communications:Wireless (RF)",
        "Electronics:Thin-film electronics",
        "Electronics:Electromagnetics"
    ],
    "issued": "2024-01-09",
    "keyword": [
        "permittivity",
        "dielectrics",
        "microwave integrated circuits",
        "glass",
        "wafer-level packaging"
    ]
}

Was this page helpful?