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Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "

Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.

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Updated: 2024-02-22
Metadata Last Updated: 2019-11-20
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Title Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "
Description Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
Modified N/A
Publisher Name National Institute of Standards and Technology
Contact mailto:eric.marksz@nist.gov
Keywords microwave , millimeter-wave , 5G , targeted chemical pressure , materials , dielectric constant , loss tangent , permittivity , low loss , tunability , frequency-agile , filters , resonators , physical vapor , deposition , molecular beam epitaxy , strain engineering , barium , strontium , titanate , superlattice , ruddlesden-popper , DFT , density functional theory
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    "identifier": "7619E70B50E70FE5E05324570681A1921968",
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    "contactPoint": {
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        "fn": "Eric Marksz"
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    "landingPage": "https:\/\/data.nist.gov\/od\/id\/7619E70B50E70FE5E05324570681A1921968",
    "description": "Included here are figures and other relevant data from the paper \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance\" published online in Nature Materials on 23 December 2019 (https:\/\/doi.org\/10.1038\/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.",
    "language": [
        "en"
    ],
    "title": "Data for \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric \"",
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/README.txt",
            "mediaType": "text\/plain"
        },
        {
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        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig1_DFT_BSTO_RP_structures_CIF.tgz",
            "format": "CIF",
            "description": "A .TGZ compressed folder containing the information necessary to reproduce the Density Functional Theory (DFT) simulations of the Ba-containing STO Ruddlesden-Popper structures. The files are included as .CIF files, for the paraelectric\/ferroelectric films spanning from n=2 to n=6. Information in this folder can be extracted via archiving tools such as Gzip.",
            "mediaType": "application\/gzip",
            "title": "Figure 1: DFT files for the Ba-containing STO Ruddlesden-Popper structures"
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        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig2_X-ray_Diffraction_50_nm_samples.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the X-ray diffraction curves shown in Figure 2. These curves show the relationship between diffracted angle 2theta (deg) and detector count intensity (a.u.)  for the 50 nm Ba-containing STO Ruddlesden-Popper thin films spanning n=2 to n=6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 2: Data for the X-Ray Diffraction curves of the Ba-containing STO Ruddlesden-Popper films (n=2-6)"
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        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3a_Dielectric_Const_vs_Temp_Freq_50_nm_samples.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the dielectric constant (K11) vs. temperature curves shown in Figure 3(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. Data is included for the 10 kHz, 100 kHz, and 1 MHz traces.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 3(a): Data for the dielectric constant (K11) vs. temperature curves for the Ba-containing STO Ruddlesden-Popper films from n=2-6"
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            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3b_Tc_Comparison.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the ferroelectric transition temperature (Tc) vs. series number (n) plots shown in Figure 3(b) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 3(b): Data for the ferroelectric transition temperature (Tc) vs. series number (n) plots for the Ba-containing STO Ruddlesden-Popper films from n=2-6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3c_lattice_w_wo_ba.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the lattice parameter (a) \/ strain vs. series number (n) plot shown in Figure 3(c) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 3(c): Data for the lattice parameter (a) \/ strain vs. series number (n) plot for the Ba-containing STO Ruddlesden-Popper films from n=2-6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3d_potential_well_n246.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the energy vs. total ionic distortion curves shown in Figure 3(d) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. These curves map out the \"double potential well\" of the materials. \"Total ionic distortion\" can be thought of as a proxy for polarization.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 3(d): Data for the energy vs. total ionic distortion curves for the Ba-containing and Ba-free STO Ruddlesden-Popper films with n = 2,4,6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4a_Complex_permittivity_100_nm_n6.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the complex dielectric constant (K11) vs. frequency curves shown in Figure 4(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 4(a): Data for the complex dielectric constant (K11) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4a_inset_Loss_tangent_100_nm_n6.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the loss tangent vs. frequency curves shown in the inset of Figure 4(a) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 4(a)[inset]: Data for the loss tangent vs. frequency curve for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4b_Film_Tunability_100_nm_n6.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the dielectric constant tunability vs applied bias electric field curves shown in Figure 4(b) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6. Data is included for 5 GHz, 20 GHz, and 40 GHz traces.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 4(b): Data for the dielectric constant tunability vs. applied bias electric field curves for the 100 nm  Ba-containing STO Ruddlesden-Popper films from n=6"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4c_FOM_100_nm_n6.csv",
            "format": "CSV",
            "description": "This CSV file contains the raw data for the figure of merit (FOM) vs. frequency curve shown in the inset of Figure 4(c) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.",
            "mediaType": "application\/vnd.ms-excel",
            "title": "Figure 4(c): Data for the figure of merit (FOM) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6"
        },
        {
            "accessURL": "https:\/\/doi.org\/10.18434\/M31968",
            "title": "DOI Access for Data for \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric \""
        }
    ],
    "license": "https:\/\/www.nist.gov\/open\/license",
    "bureauCode": [
        "006:55"
    ],
    "modified": "2019-11-20 00:00:00",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "theme": [
        "Electronics:Optoelectronics",
        "Advanced Communications:Wireless (RF)",
        "Physics:Condensed matter",
        "Metrology:Electrical\/electromagnetic metrology",
        "Materials:Materials characterization",
        "Materials:Ceramics",
        "Electronics:Thin-film electronics",
        "Electronics:Electromagnetics"
    ],
    "issued": "2019-11-22",
    "keyword": [
        "microwave",
        "millimeter-wave",
        "5G",
        "targeted chemical pressure",
        "materials",
        "dielectric constant",
        "loss tangent",
        "permittivity",
        "low loss",
        "tunability",
        "frequency-agile",
        "filters",
        "resonators",
        "physical vapor",
        "deposition",
        "molecular beam epitaxy",
        "strain engineering",
        "barium",
        "strontium",
        "titanate",
        "superlattice",
        "ruddlesden-popper",
        "DFT",
        "density functional theory"
    ]
}

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