Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
About this Dataset
Title | Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric " |
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Description | Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies. |
Modified | 2019-11-20 00:00:00 |
Publisher Name | National Institute of Standards and Technology |
Contact | mailto:[email protected] |
Keywords | microwave , millimeter-wave , 5G , targeted chemical pressure , materials , dielectric constant , loss tangent , permittivity , low loss , tunability , frequency-agile , filters , resonators , physical vapor , deposition , molecular beam epitaxy , strain engineering , barium , strontium , titanate , superlattice , ruddlesden-popper , DFT , density functional theory |
{ "identifier": "7619E70B50E70FE5E05324570681A1921968", "accessLevel": "public", "contactPoint": { "hasEmail": "mailto:[email protected]", "fn": "Eric Marksz" }, "programCode": [ "006:045" ], "landingPage": "https:\/\/data.nist.gov\/od\/id\/7619E70B50E70FE5E05324570681A1921968", "title": "Data for \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric \"", "description": "Included here are figures and other relevant data from the paper \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance\" published online in Nature Materials on 23 December 2019 (https:\/\/doi.org\/10.1038\/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.", "language": [ "en" ], "distribution": [ { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/README.txt", "mediaType": "text\/plain" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/README.txt.sha256", "mediaType": "text\/plain" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig1_DFT_BSTO_RP_structures_CIF.tgz", "format": "CIF", "description": "A .TGZ compressed folder containing the information necessary to reproduce the Density Functional Theory (DFT) simulations of the Ba-containing STO Ruddlesden-Popper structures. The files are included as .CIF files, for the paraelectric\/ferroelectric films spanning from n=2 to n=6. Information in this folder can be extracted via archiving tools such as Gzip.", "mediaType": "application\/gzip", "title": "Figure 1: DFT files for the Ba-containing STO Ruddlesden-Popper structures" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig2_X-ray_Diffraction_50_nm_samples.csv", "format": "CSV", "description": "This CSV file contains the raw data for the X-ray diffraction curves shown in Figure 2. These curves show the relationship between diffracted angle 2theta (deg) and detector count intensity (a.u.) for the 50 nm Ba-containing STO Ruddlesden-Popper thin films spanning n=2 to n=6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 2: Data for the X-Ray Diffraction curves of the Ba-containing STO Ruddlesden-Popper films (n=2-6)" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3a_Dielectric_Const_vs_Temp_Freq_50_nm_samples.csv", "format": "CSV", "description": "This CSV file contains the raw data for the dielectric constant (K11) vs. temperature curves shown in Figure 3(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. Data is included for the 10 kHz, 100 kHz, and 1 MHz traces.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 3(a): Data for the dielectric constant (K11) vs. temperature curves for the Ba-containing STO Ruddlesden-Popper films from n=2-6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3b_Tc_Comparison.csv", "format": "CSV", "description": "This CSV file contains the raw data for the ferroelectric transition temperature (Tc) vs. series number (n) plots shown in Figure 3(b) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 3(b): Data for the ferroelectric transition temperature (Tc) vs. series number (n) plots for the Ba-containing STO Ruddlesden-Popper films from n=2-6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3c_lattice_w_wo_ba.csv", "format": "CSV", "description": "This CSV file contains the raw data for the lattice parameter (a) \/ strain vs. series number (n) plot shown in Figure 3(c) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 3(c): Data for the lattice parameter (a) \/ strain vs. series number (n) plot for the Ba-containing STO Ruddlesden-Popper films from n=2-6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig3d_potential_well_n246.csv", "format": "CSV", "description": "This CSV file contains the raw data for the energy vs. total ionic distortion curves shown in Figure 3(d) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. These curves map out the \"double potential well\" of the materials. \"Total ionic distortion\" can be thought of as a proxy for polarization.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 3(d): Data for the energy vs. total ionic distortion curves for the Ba-containing and Ba-free STO Ruddlesden-Popper films with n = 2,4,6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4a_Complex_permittivity_100_nm_n6.csv", "format": "CSV", "description": "This CSV file contains the raw data for the complex dielectric constant (K11) vs. frequency curves shown in Figure 4(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 4(a): Data for the complex dielectric constant (K11) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4a_inset_Loss_tangent_100_nm_n6.csv", "format": "CSV", "description": "This CSV file contains the raw data for the loss tangent vs. frequency curves shown in the inset of Figure 4(a) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 4(a)[inset]: Data for the loss tangent vs. frequency curve for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4b_Film_Tunability_100_nm_n6.csv", "format": "CSV", "description": "This CSV file contains the raw data for the dielectric constant tunability vs applied bias electric field curves shown in Figure 4(b) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6. Data is included for 5 GHz, 20 GHz, and 40 GHz traces.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 4(b): Data for the dielectric constant tunability vs. applied bias electric field curves for the 100 nm Ba-containing STO Ruddlesden-Popper films from n=6" }, { "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/7619E70B50E70FE5E05324570681A1921968\/Fig4c_FOM_100_nm_n6.csv", "format": "CSV", "description": "This CSV file contains the raw data for the figure of merit (FOM) vs. frequency curve shown in the inset of Figure 4(c) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.", "mediaType": "application\/vnd.ms-excel", "title": "Figure 4(c): Data for the figure of merit (FOM) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6" }, { "accessURL": "https:\/\/doi.org\/10.18434\/M31968", "title": "DOI Access for Data for \"Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric \"" } ], "bureauCode": [ "006:55" ], "modified": "2019-11-20 00:00:00", "publisher": { "@type": "org:Organization", "name": "National Institute of Standards and Technology" }, "theme": [ "Electronics:Optoelectronics", "Advanced Communications:Wireless (RF)", "Physics:Condensed matter", "Metrology:Electrical\/electromagnetic metrology", "Materials:Materials characterization", "Materials:Ceramics", "Electronics:Thin-film electronics", "Electronics:Electromagnetics" ], "keyword": [ "microwave", "millimeter-wave", "5G", "targeted chemical pressure", "materials", "dielectric constant", "loss tangent", "permittivity", "low loss", "tunability", "frequency-agile", "filters", "resonators", "physical vapor", "deposition", "molecular beam epitaxy", "strain engineering", "barium", "strontium", "titanate", "superlattice", "ruddlesden-popper", "DFT", "density functional theory" ] }