{
    "identifier": "6A4A339C5C091C09E053245706817F211916",
    "accessLevel": "public",
    "contactPoint": {
        "hasEmail": "mailto:[email protected]",
        "fn": "Bryan Barnes"
    },
    "programCode": [
        "006:045"
    ],
    "landingPage": "https:\/\/data.nist.gov\/od\/id\/6A4A339C5C091C09E053245706817F211916",
    "title": "Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method",
    "description": "An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry.  Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry.  Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results.  Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files.",
    "language": [
        "en"
    ],
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/6A4A339C5C091C09E053245706817F211916\/README.txt",
            "mediaType": "text\/plain"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/6A4A339C5C091C09E053245706817F211916\/README.txt.sha256",
            "mediaType": "text\/plain"
        },
        {
            "accessURL": "https:\/\/doi.org\/10.18434\/T4\/1500937",
            "format": "text\/html",
            "description": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method",
            "title": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method"
        }
    ],
    "bureauCode": [
        "006:55"
    ],
    "modified": "2018-04-20",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "theme": [
        "Metrology:Dimensional metrology",
        "Manufacturing:Process measurement and control",
        "Nanotechnology:Nanoelectronics"
    ],
    "keyword": [
        "finite-difference time-domain",
        "FDTD",
        "electromagnetic simulation",
        "pattered defect inspection",
        "defects",
        "simulation input"
    ]
}