{
    "identifier": "ark:\/88434\/mds2-3031",
    "accessLevel": "public",
    "contactPoint": {
        "hasEmail": "mailto:[email protected]",
        "fn": "Rob Jones"
    },
    "programCode": [
        "006:045"
    ],
    "landingPage": "https:\/\/data.nist.gov\/od\/id\/mds2-3031",
    "title": "Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz",
    "description": "Data published in paper \"Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz\"We investigated the effect of two uncertainty sources, probe placement error and capacitance per unit length variation, on transistor S-parameter measurements calibrated with two different mTRL calibration kits. We propagated these uncertainties onto common-emitter (CE) and common-base (CB) heterojunction-bipolar-transistor (HBT) measurements to show how the calibration kit selection affects the accuracy of the resulting S-parameter transistor measurements and calculated characterization metrics such as K factor and maximum available gain (MAG). The measured data are from Sparameters taken from a Vector Network Analyzer (VNA). We used WR3.4 extender heads connected to a VNA and measured S-parameters from 210 GHz to 325 GHz with a 500 MHz frequency step. The probes were landed manually for each of calibration standard measurements and transistor measurements with an approximate probe landing error of +\/- 10 um. Each raw measurement was stored and corrected later in post-processing using the mTRL calibration algorithm in the Microwave Uncertainty Framework (MUF). In this dataset, we also included the capacitance per unit length from a commercial Electromagnetic (EM) solver of the two transmission line cross sections used in the calibration kits. We varied the geometric and material properties of the transmission lines to obtain the histograms.",
    "language": [
        "en"
    ],
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3031\/fig3_ERB.txt",
            "format": "Comments lines have a % in front of them, data is space delimited.",
            "description": "Characteristic  impedance of the transmission lines from the measured propagation constant with the simulated capacitance per unit length variation.",
            "mediaType": "text\/plain",
            "title": "Data for figure 3"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3031\/fig4_ERB.txt",
            "format": "Comment lines start with a % sign. Data lines are space delimited",
            "description": "Measured scattering parameters of a 4 ?m Common Emitter HBT with a microstrip and a CPW-Gcalibation kits. For each nominal curve for each Sparameter, there are two prediction interval curves (PI) for both the capacitance variation and the probe placement variation. We show nominal curves for both the CPWG and Microstrip calibrations of the HBT Sparameters . The prediction interval (two times the standard deviation) is the uncertainty. Microstrip HBT bias point: Vce = 1.8 V, Je = 19.2 mA\/?m2. CPW-G HBT bias point: Vce = 1.8 V, Je = 19.2 mA\/?m2",
            "mediaType": "text\/plain",
            "title": "Data for figure 4"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3031\/fig5_ERB.txt",
            "format": "Comment lines start with a % symbol. Data lines are space delimited",
            "description": "Measured stability factor (K factor) and maximum available gain (MAG) of a 3 ?m Common Base HBT with three different base inductances resulting from the ground connections. Uncertainty is due to the probe placement error as capacitance per unit length has no affect on these metrics. Uncertainty is only visible for the K factor metric as it is negligible for MAG. Uncertainty bounds are the upper and lower prediction intervals. For all cases, the bias point: Vcb = 1.0 V, Je = 20 mA\/?m2",
            "mediaType": "text\/plain",
            "title": "data for Figure 5"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3031\/fig2_ERB.txt",
            "format": "Commented lines start with a % sign. Data lines are space delimited. Text broken up into three sections. One for the histogram, one for the Gaussian curve, and one for the measured data",
            "description": "Histograms of the capacitance per unit length from simulation with manufacturer?s tolerance. Histogram generated using a 100 iteration Monte Carlo. Gaussian curve was fit to the histogram. Measured capacitance per unit length also contained in the data. Histogram, Gaussian, and measured values repeated for both microstrip and CPW cases.",
            "mediaType": "text\/plain",
            "title": "data for Figure 2"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3031\/3031_README.txt",
            "format": "Plain text descriptions of the data files. No specific formatting.",
            "description": "README",
            "mediaType": "text\/plain",
            "title": "README"
        }
    ],
    "bureauCode": [
        "006:55"
    ],
    "modified": "2023-06-08 00:00:00",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "theme": [
        "Electronics:Semiconductors"
    ],
    "keyword": [
        "calibration",
        "on-wafer",
        "uncertainty",
        "microstrip",
        "coplanar waveguide",
        "HBT",
        "common emitter",
        "common base",
        "WR 3.4"
    ]
}