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Scanning transmission electron tomography of in-plane gate-all-around transistors
from a commercially available device

Electron tomography tilt series data, reconstruction, and data processing code for three-dimensional imaging of a gate-all-around (GAA) transistor layer extracted from a commercially available chip.

This data was collected on July 21, 2025.

About this Dataset

Updated: 2026-09-04
Metadata Last Updated: 2026-07-22 00:00:00
Date Created: N/A
Data Provided by:
Dataset Owner: N/A

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Table representation of structured data
Title Scanning transmission electron tomography of in-plane gate-all-around transistors from a commercially available device
Description Electron tomography tilt series data, reconstruction, and data processing code for three-dimensional imaging of a gate-all-around (GAA) transistor layer extracted from a commercially available chip. This data was collected on July 21, 2025.
Modified 2026-07-22 00:00:00
Publisher Name National Institute of Standards and Technology
Contact mailto:[email protected]
Keywords tomography , STEM , HAADF , 3D , CHIPS , gate-all-around , transistor , nanocharacterization
{
    "identifier": "ark:\/88434\/mds2-4257",
    "accessLevel": "public",
    "contactPoint": {
        "hasEmail": "mailto:[email protected]",
        "fn": "Andrew Herzing"
    },
    "programCode": [
        "006:045"
    ],
    "landingPage": "https:\/\/data.nist.gov\/od\/id\/mds2-4257",
    "title": "Scanning transmission electron tomography of in-plane gate-all-around transistors\nfrom a commercially available device\n",
    "description": "Electron tomography tilt series data, reconstruction, and data processing code for three-dimensional imaging of a gate-all-around (GAA) transistor layer extracted from a commercially available chip.\n\nThis data was collected on July 21, 2025.",
    "language": [
        "en"
    ],
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-4257\/STEM_HAADF_Tomography_GAA_InPlane.zip",
            "mediaType": "application\/x-zip-compressed",
            "title": "STEM HAADF Tomography GAA"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-4257\/README.txt",
            "mediaType": "text\/plain",
            "title": "README"
        }
    ],
    "bureauCode": [
        "006:55"
    ],
    "modified": "2026-07-22 00:00:00",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "theme": [
        "Electronics:Semiconductors",
        "Materials:Materials characterization"
    ],
    "keyword": [
        "tomography",
        "STEM",
        "HAADF",
        "3D",
        "CHIPS",
        "gate-all-around",
        "transistor",
        "nanocharacterization"
    ]
}