{
    "identifier": "ark:\/88434\/mds2-3403",
    "accessLevel": "public",
    "contactPoint": {
        "hasEmail": "mailto:[email protected]",
        "fn": "Rob Jones"
    },
    "programCode": [
        "006:045"
    ],
    "landingPage": "",
    "title": "Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz",
    "description": "This dataset contains the simulated and calibrated measured scattering parameters (S-parameters) of a via, a short-circuit manifold test structure, a single heterojunction bipolar transistor (HBT) in common emitter (CE) configuration, and a 4-finger CE HBT cell. Six sites of the single CE HBT device were measured and five sites of the 4-finger CE HBT cell were measured. Bias point for all transistors was at V_ce: 2 V and J_c: 9.62mA\/um^2. This dataset also contains the simulated and calibrated measured S-parameters of two 4-finger CE HBT cells, one with a 'Direct' finger alignment and one with a 'Paired' finger alignment, as well as one 2-finger common base (CB) cell. The simulated and measured stability factor (K factor) for the two CE cells and one CB cell is also included which is derived from the S-parameters of each cell. The simulated via and short-circuit manifold test structure as well as the manifolds for all multi-finger cells were obtained using a 2.5D method of moments commercial solver. The transistor model used was provided by the manufacturer and the simulated results for the devices with transistors were obtained from a commercial circuit solver using the HBT model and the results from the manifold simulations provided by the 2.5D solver.",
    "language": [
        "en"
    ],
    "distribution": [
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3403\/fig1.txt",
            "format": "Commented lines start with a % sign. Data lines are space delimited.",
            "description": "Magnitude and phase of the measured and simulated S-parameters for a via and short-circuit manifold test structure. Frequency for both the measured and simulated data has units of GHz from 140 to 230 GHz. The transmission coefficients (S21 and S12) for the via are in units of decibels (dB) for the magnitude and are in units of degrees for the phase. The reflection coefficients (S11 and S22) for the short-circuit manifold test structure  are in linear units for the magnitude and are in units of degrees for the phase.",
            "mediaType": "text\/plain",
            "title": "data for Figure 1"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3403\/fig2.txt",
            "format": "Commented lines start with a % sign. Data lines are space delimited.",
            "description": "Magnitude and phase of the measured and simulated S-parameters for the single HBT. Frequency for both the measured and simulated data has units of GHz from 140 to 230 GHz. The transmission coefficients (S21 and S12) for the single HBT are in units of decibels (dB) for the magnitude and are in units of degrees for the phase. The reflection coefficients (S11 and S22) for the single HBT are in linear units for the magnitude and are in units of degrees for the phase. There are six measured sites which are indicated in the file by their site number.",
            "mediaType": "text\/plain",
            "title": "data for Figure 2"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3403\/fig3.txt",
            "format": "Commented lines start with a % sign. Data lines are space delimited.",
            "description": "Magnitude and phase of the measured and simulated S-parameters for the 4-finger HBT. Frequency for both the measured and simulated data has units of GHz from 140 to 230 GHz. The transmission coefficients (S21 and S12) for the 4-finger HBT are in units of decibels (dB) for the magnitude and are in units of degrees for the phase. The reflection coefficients (S11 and S22) for the 4-finger HBT are in linear units for the magnitude and are in units of degrees for the phase. There are five measured sites which are indicated in the file by their site number.",
            "mediaType": "text\/plain",
            "title": "data for Figure 3"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3403\/fig4.txt",
            "format": "Commented lines start with a % sign. Data lines are space delimited.",
            "description": "Magnitude and phase of the measured and simulated S-parameters for two CE cells and one CB cell. The CE cells are labeled 'Paired' and 'Direct' to differentiate them and the CB cell is labeled 'CB'. Frequency for both the measured and simulated data has units of GHz from 140 to 230 GHz. The magnitude of the transmission coefficient (S21) for the cells is in units of decibels (dB). The reflection coefficients (S11 and S22) for the cells are in linear units for the magnitude and are in units of degrees for the phase. The measured and simulated Stability factor (K factor) for the cells is also included and does not have units.",
            "mediaType": "text\/plain",
            "title": "data for Figure 4"
        },
        {
            "downloadURL": "https:\/\/data.nist.gov\/od\/ds\/mds2-3403\/3403_README.txt",
            "description": "README",
            "mediaType": "text\/plain",
            "title": "README"
        }
    ],
    "bureauCode": [
        "006:55"
    ],
    "modified": "2024-07-09 00:00:00",
    "publisher": {
        "@type": "org:Organization",
        "name": "National Institute of Standards and Technology"
    },
    "theme": [
        "Electronics:Semiconductors"
    ],
    "keyword": [
        "common-base",
        "common-emitter",
        "HBT",
        "InP",
        "model",
        "on-wafer",
        "s-parameters",
        "stability",
        "WR5.1"
    ]
}